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NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG260234 AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
* THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (1 W) AMPLIFICATION PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz PO = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz MAXIMUM STABLE GAIN: MSG = 23 dB TYP @ VCE = 6 V, IC = 100 mA, f = 460 MHz SiGe TECHNOLOGY: UHS2-HV process ABSOLUTE MAXIMUM RATINGS: VCBO = 25 V 3-PIN POWER MINIMOLD (34 PACKAGE)
* * * *
ORDERING INFORMATION
PART NUMBER NESG260234 NESG260234-T1 ORDER NUMBER NESG260234-AZ NESG260234-T1-AZ PACKAGE 3-pin power minimold (Pb-Free) Note1 QUANTITY 25 pcs (Non reel) 1 kpcs/reel SUPPLYING FORM * Magazine case * 12 mm wide embossed taping * Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 25 9.2 2.8 600 1.9 150 -65 to +150 UNIT V V V mA W C C
Note Mounted on 34.2 cm2 x 0.8 mm (t) glass epoxy PWB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NESG260234 THERMAL RESISTANCE (TA = 25C)
PARAMETER Thermal Resistance from Junction to Ambient
Note
SYMBOL Rthj-a
RATINGS 65
UNIT C/W
Note Mounted on 34.2 cm2 x 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = 25C)
PARAMETER Collector to Emitter Voltage Collector Current Input Power
Note
SYMBOL VCE IC Pin
MIN. - - -
TYP. 6.0 400 15
MAX. 7.2 500 20
UNIT V mA dBm
Note Input power under conditions of VCE 6.0 V, f = 460 MHz
NESG260234 ELECTRICAL CHARACHTERISTICS (TA = 25C)
PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Linear gain (1) Linear gain (2) Output Power (1) Output Power (2) Collector Efficiency (1) Collector Efficiency (2) GL GL Po Po c VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 0 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm 19 - 28.5 - - 22 19 30.0 30.0 50 - - - - - dB dB dBm dBm % ICBO IEBO hFE
Note
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 9.2 V, IE = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 3 V, IC = 100 mA
- - 80
- - 120
1 1 180
A A -
c
-
60
-
%
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
hFE CLASSIFICATION
RANK Marking hFE Value FB SP 80 to 180
NESG260234 3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT:mm)
4.50.1 1.60.2 1.50.1
0.8 MIN.
1
0.420.06
2
3
4.00.25
2.50.1
0.420.06 0.470.06 1.5 3.0
0.41+0.03 -0.06
PIN CONNECTIONS
1. Collector 2. Emitter 3. Base
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
12/22/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.

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